sot223 npn silicon planar medium power high gain transistor issue 3 - october 1995 features * gain of 400 at i c =2 amps and low saturation voltage * extremely low equivalent on-resistance; r ce(sat) 92m w at 3a applications * darlington replacement * flash gun convertors and battery powered circuits partmarking detail - FZT689B complementary type - fzt789b absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v peak pulse current i cm 8a continuous collector current i c 3a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltage collector-base collector-emitter v (br)cbo 20 v i c =100 m a v (br)ceo 20 v i c =10ma* emitter-base v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =16v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.10 0.50 0.45 v v v i c =0.1a, i b =0.5ma* i c =2a, i b =10ma* i c =3a, i b =20ma* base-emittersaturationvoltage v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.9 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =0.1a, v ce =2v* i c =2a, v ce =2v* i c =6a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 30 800 ns ns i c =500ma,i b1 =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT689B FZT689B c c e b 3 - 220 3 - 219 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) v ce(sat) v i c i c - collector current (amps) v - (v ol t s) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor m alised gain v - (v olts) v - (v olts) v ce =2v v ce =2v 1.5k 1k 500 h - t ypic al ga i n t amb =25c i c /i b =10 i c /i b =200 i c /i b =100 i c /i b =100 -55c +25c +100c +175c 0 0 -55c +25c +100c +175c i c /i b =100 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
sot223 npn silicon planar medium power high gain transistor issue 3 - october 1995 features * gain of 400 at i c =2 amps and low saturation voltage * extremely low equivalent on-resistance; r ce(sat) 92m w at 3a applications * darlington replacement * flash gun convertors and battery powered circuits partmarking detail - FZT689B complementary type - fzt789b absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v peak pulse current i cm 8a continuous collector current i c 3a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltage collector-base collector-emitter v (br)cbo 20 v i c =100 m a v (br)ceo 20 v i c =10ma* emitter-base v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =16v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.10 0.50 0.45 v v v i c =0.1a, i b =0.5ma* i c =2a, i b =10ma* i c =3a, i b =20ma* base-emittersaturationvoltage v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.9 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =0.1a, v ce =2v* i c =2a, v ce =2v* i c =6a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 30 800 ns ns i c =500ma,i b1 =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT689B FZT689B c c e b 3 - 220 3 - 219 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) v ce(sat) v i c i c - collector current (amps) v - (v ol t s) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor m alised gain v - (v olts) v - (v olts) v ce =2v v ce =2v 1.5k 1k 500 h - t ypic al ga i n t amb =25c i c /i b =10 i c /i b =200 i c /i b =100 i c /i b =100 -55c +25c +100c +175c 0 0 -55c +25c +100c +175c i c /i b =100 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
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